| Ident. | Authors (with country if any) | Title |
|---|
| 000485 |
| Effect of growth kinetics on the structural and optical properties of quantum dot ensembles |
| 000668 |
| Formation specifity of InAs/GaAs submonolayer superlattice |
| 000969 |
| Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures |
| 000991 |
| Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation |
| 000A16 |
| 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots |
| 000A17 |
| 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices |
| 000A18 |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000C12 |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| 000D73 |
| Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers |
| 000D80 |
| Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots |
| 000E06 |
| Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status |
| 000E18 |
| 1.75 μm emission from self-organized InAs quantum dots on GaAs |
| 000F30 |
| Optical studies of modulation doped InAs/GaAs quantum dots |
| 000F31 |
| Optical properties of InAlAs quantum dots in an AlGaAs matrix |
| 000F37 |
| Lateral association of vertically-coupled quantum dots |
| 000F43 |
| Injection lasers based on InGaAs quantum dots in an AlGaAs matrix |
| 000F50 |
| Formation of InSb quantum dots in a GaSb matrix |
| 000F51 |
| Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy |
| 000F52 |
| Formation of InAs quantum dots on a silicon (100) surface |
| 001114 |
| InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition |
| 001116 |
| Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition |
| 001146 |
| Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix |
| 001150 |
| Identification of radiative recombination channels in quantum dot structures |
| 001158 |
| Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix |
| 001161 |
| Optical emission range of structures with strained InAs quantum dots in GaAs |
